? 2005 ixys all rights reserved symbol test conditions maximum ratings v dss t j = 25 c to 150 c 500 v v dgr t j = 25 c to 150 c; r gs = 1 m ? 500 v v gsm 30 v i d25 t c = 25 c44a i dm t c = 25 c, pulse width limited by t jm 132 a i ar t c = 25 c44a e ar t c = 25 c55mj e as t c = 25 c 1.7 j dv/dt i s i dm , di/dt 100 a/ s, v dd v dss , 10 v/ns t j 150 c, r g = 10 ? p d t c = 25 c 650 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6 mm (0.062 in.) from case for 10 s 300 c maximum tab temperature for soldering 260 c for 10s m d mounting torque(to-247) 1.13/10 nm/lb.in. weight to-3p 6 g g = gate d = drain s = source tab = drain ds99364(03/05) symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. v dss v gs = 0 v, i d = 250 a 500 v v gs(th) v ds = v gs , i d = 250 a 3.0 5.0 v i gss v gs = 20 v dc , v ds = 0 10 na i dss v ds = v dss 25 a v gs = 0 v t j = 125 c 250 a r ds(on) v gs = 10 v, i d = 0.5 i d25 140 m ? pulse test, t 300 s, duty cycle d 2 % polarhv tm power mosfet advance technical information n-channel enhancement mode avalanche rated features z international standard packages z unclamped inductive switching (uis) rated z low package inductance - easy to drive and to protect advantages z easy to mount z space savings z high power density ixtq 44n50p v dss = 500 v i d25 = 44 a r ds(on) < 140 m ? ? ? ? ? to-3p (ixtq) g d s (tab)
ixys reserves the right to change limits, test conditions, and dimensions. ixtq 44n50p ixys mosfets and igbts are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 one or moreof the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405b2 6,759,692 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 20 v; i d = 0.5 i d25 , pulse test 20 32 s c iss 5440 pf c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 639 pf c rss 40 pf t d(on) 25 ns t r v gs = 10 v, v ds = 0.5 v dss , i d = i d25 27 ns t d(off) r g = 3 ? (external) 75 ns t f 21 ns q g(on) 98 nc q gs v gs = 10 v, v ds = 0.5 v dss , i d = 0.5 i d25 35 nc q gd 30 nc r thjc 0.19 k/w r thck (to-3p) 0.21 k/w source-drain diode characteristic values (t j = 25 c, unless otherwise specified) symbol test conditions min. typ. max. i s v gs = 0 v 44 a i sm repetitive 132 a v sd i f = i s , v gs = 0 v, 1.5 v pulse test, t 300 s, duty cycle d 2 % t rr i f = 22 a 400 ns -di/dt = 100 a/ s to-3p (ixtq) outline
? 2005 ixys all rights reserved ixtq 44n50p fig. 2. extended output characteristics @ 25 o c 0 10 20 30 40 50 60 70 80 90 100 0 3 6 9 12 15 18 21 24 27 30 v d s - volts i d - amperes v gs = 10v 8v 5v 6v 7v fig. 3. output characteristics @ 125 o c 0 5 10 15 20 25 30 35 40 45 0246 810121416 v d s - volts i d - amperes v gs = 10v 8v 7v 6v 5v fig. 1. output characteristics @ 25 o c 0 5 10 15 20 25 30 35 40 45 01234567 v d s - volts i d - amperes v gs = 10v 8v 7v 5v 6v fig. 4. r ds(on ) norm alized to 0.5 i d25 value vs. junction temperature 0.4 0.7 1 1.3 1.6 1.9 2.2 2.5 2.8 3.1 3.4 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r d s ( o n ) - normalized i d = 44a i d = 22a v gs = 10v fig. 6. drain current vs. case temperature 0 5 10 15 20 25 30 35 40 45 50 -50 -25 0 25 50 75 100 125 150 t c - degrees centigrade i d - amperes fig. 5. r ds(on) norm alized to 0.5 i d25 value vs. i d 0.7 1 1.3 1.6 1.9 2.2 2.5 2.8 3.1 3.4 0 102030405060708090100 i d - amperes r d s ( o n ) - normalized t j = 125 c t j = 25 c v gs = 10v
ixys reserves the right to change limits, test conditions, and dimensions. ixtq 44n50p ixys mosfets and igbts are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 one or moreof the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405b2 6,759,692 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 fig. 11. capacitance 10 100 1000 10000 0 5 10 15 20 25 30 35 40 v d s - volts capacitance - picofarads c iss c oss c rss f = 1mhz fig. 10. gate charge 0 1 2 3 4 5 6 7 8 9 10 0 1020 3040 5060 7080 90100 q g - nanocoulombs v g s - volts v ds = 250v i d = 22a i g = 10ma fig. 7. input adm ittance 0 10 20 30 40 50 60 70 3.5 4 4.5 5 5.5 6 6.5 v g s - volts i d - amperes t j = 125 c 25 c -40 c fig. 8. transconductance 0 10 20 30 40 50 60 0 10203040506070 i d - amperes g f s - siemens t j = -40 c 25 c 125 c fig. 9. source current vs. source-to-drain voltage 0 20 40 60 80 100 120 140 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 v s d - volts i s - amperes t j = 125 c t j = 25 c fig. 12. for w ar d-bias safe operating area 1 10 100 1000 10 100 1000 v d s - volts i d - amperes 100s 1ms dc t j = 150 c t c = 25 c r ds( on) limit 10ms 25 s
? 2005 ixys all rights reserved ixtq 44n50p fig. 13. maximum tr ansient thermal resistance 0.01 0.10 1.00 0. 1 1 10 100 1000 pulse width - milliseconds r ( t h ) j c - c / w
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